2015 “Key Technologies of GaN UV and Deep UV LED” won 2nd Prize of National Science and Technology Progress Award
2
Major Technological Invention Award
2010 “Industrialization of Ultra-high Brightness LED Chips for TFT-LCD Backlight” won the Major Technological Invention Award of Information Industry issued by the Ministry of Industry and Information Technology
3
National Key & New Product Award
2011 “LED Chip (S-23ABMUP) for LCD Backlighting” was honored with National Key & New Product Award
2012 “White LED Chip (S-50BBMUP) of Illuminating Power-type” was honored with National Key & New Product Award
2013 “Green LED Chip of High Luminous Efficacy Power-type” was honored with National Key & New Product Award
4
China Patent Awards
?The 2012 invention patent “LED with Three-dimensional Spatially Distributed Electrode and Manufacturing Method” awarded China Patent Excellence Award;
?The 2014 invention patent “Method of Removing LED Substrate” awarded China Patent Excellence Award;
?The 2015 invention patent “Nitride LED with Compound Current Spreading Layer” awarded China Patent Excellence Award;
?The 2017 invention patent “LED and Manufacturing Method” awarded China Patent Excellence Award
5
Fujian Outstanding New Product Award
2008 “S-RGB07 Full-color Ultra-High Brightness LED Chips” won the first prize
2010 “RS-B1 Ultra-high Brightness Power Red Lighting LED Chips” won the first prize
2012 “LED Chips Project of S-23ABMUP series Used for Backlight” won the first prize
6
Fujian Science and Technology Progress Award
2009 “Development and Industrialization of Semiconductor Lighting High Brightness Power WLED Chips” Project won the 2nd Prize
2012 “Preparation and Industrialization of Ultra-High Brightness LED Chips Used for TFT-LCD Backlight” won the 1st Prize
2013 “Industrialization of Power-type WLED New Light Manufacturing Technology” won the 1st prize
2014 “Industrialization of High Luminous Efficacy Power-type LED Chips Manufacturing Technology” won the 2nd Prize
7
Fujian Patent Awards
?The 2013 invention patent “Method of Manufacturing GaN-based Film LED Based on Masklessly Transferring Photonic Crystal Structure” awarded second prize of Fujian Patent Award;
?The 2014 invention patent “High-brightness GaN-based LED and Manufacturing Method” awarded first prize of Fujian Patent Award;
8
Fujian Standard Contribution Award
2011 “Gallium Arsenide LED Power-type Chip (Q/SAGD 001-2009)” was honored with the 3rd Prize
2014 Enterprise Standard “LED Thin Film Chip (Q/SAGD 009-2012)” was honored with the 1st Prize
9
National Intellectual Property Advantageous Enterprise
got approved as National Intellectual Property Advantageous Enterprise
10
National Intellectual Property Demonstration Enterprise:
National Intellectual Property Demonstration Enterprise: got approved as National Intellectual Property Demonstration Enterprise in 2018;
Undertake provincial and ministerial level projects
（Since 2001, San An optoelectronics led the project）
1
Key research projects of the Ministry of Science and Technology
“Manufacturing Technology of Power-Type WLED Light Source” project of 863 Program in 2006
“Complete Set Manufacturing Process Technology R&D and Showcase Production Line of HCPV GaInP/GaInAs/Ge Triple-junction Solar Cells” Project in advanced energy field of National 863 Program in 2012
“Epitaxial Materials Technology of High-Indium-Component GaN for Green Laser” project in new material technology field of National 863 Program in 2015
international cooperation project of “Cooperative R&D of Key Technologies of High Efficiency Power Amplifier for Mobile Communication” in 2015
?In 2016, San’an undertook two national key R&D programs- “research on the epitaxy and industrialization technology of solid state UV light high A1-content structural materials” and “manufacturing technology of high-luminous-efficiency blue and gree
?In 2017, San’an undertook national key R&D programs-“research on green manufacturing technology of semiconductor lighting product technology chain” and “research on high-quality epitaxy and internal quantum efficiency improvement technology of LED wi
2
Development and Reform Commission, the revitalization of electronic information industry and technological transformation special
project of “Illuminating High-power LED Epitaxy, Chips Industrialization” for Revitalization and Technological Transformation of the Electronic and Information Industry Initiated by the National Development and Reform Commission in 2012;
project of “Intelligent Lighting High Luminous Efficacy and Power-type RGB LED Epitaxy, Chips R&D and Industrialization” for revitalization and technological transformation of the electronic and information industry initiated by the National Developme
3
MIIT Electronics Development Fund
?In 2014, San’an undertook the program of MIIT Electronics Development Fund-“key equipment & process development and industrialization for LED chip production line”
?In 2012, San’an undertook the program of MIIT Electronics Development Fund-“the industrialization of ultrahigh-brightness LED chip used for TFT-LCD backlight”
